Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Motorola Semiconductor |
Case |
SOT119 |
Vbr CBO |
36 |
Vbr CEO |
18 |
Max. PD (W) |
250 |
Max. hFE |
150 |
Min hFE |
10 |
Ic Max. (A) |
20 |
@Ic (test) (A) |
5.0 |
Polarity |
NPN |
Derate Above 25°C |
1.4 |
Trans. Freq (Hz) Min. |
175M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
4-29 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
250 W |
Maximum Collector-Base Voltage |Vcb| |
36 V |
Maximum Collector-Emitter Voltage |Vce| |
18 V |
Maximum Emitter-Base Voltage |Veb| |
4 V |
Maximum Collector Current |Ic max| |
20 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Forward Current Transfer Ratio (hFE), MIN |
10 |
SKU |
258358 |