MSD602-RT1G
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MSD602-RT1G

SKU: MSD602-RT1G
MSD602-RT1G Transistor Silicon NPN CASE: SOT346 MAKE: Generic
Product specifications
Equivalent MSD602-RT1
Type Transistor Silicon NPN
Case SOT346
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code WR
SKU 1437677
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