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NB211XI
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NB211XI

SKU: NB211XI
NB211XI Transistor Silicon NPN CASE: SOT23 MAKE: National Semiconductor - NSC
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer National Semiconductor - NSC
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 600m
C(ob) (F) 3.5p
hfe 180
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 30m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 140
SKU 1250176
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