NB212YG

SKU: NB212YG

NB212YG Transistor Silicon NPN CASE: SOT23 MAKE: National Semiconductor - NSC

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	National Semiconductor - NSC
Vbr CBO	55
Vbr CEO	50
Max. PD (W)	600m
C(ob) (F)	3.5p
hfe	85
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	500n
Polarity	NPN
Trans. Freq (Hz) Min.	50M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	150
@Ic (A)	30m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.75 W
Maximum Collector-Base Voltage \|Vcb\|	55 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	68
SKU	1250750

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