NE02103
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NE02103

SKU: NE02103
NE02103 Transistor Silicon NPN CASE: TO120 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO120
Manufacturer Generic
Vbr CBO 25
@Freq. (test) 2.0G
@Ic (A) 5.0m
@Ic (A) 5.0m
Mat. Silicon Logic
Noise Fig. 2.7
Oper. Gain Typ (S21) 6.5
f(osc) Max. (Hz) 2.0G-
Polarity NPN
PD Max. (W) 700m
S11 Deg. (Typ) 163
S11 Mag Typ. .66
S22 Deg. Typ. -71
S22 Mag Typ. .379
@VDS (VCE) (test) (V) 10
Coll. (or drain) Current Max. 70m
@Freq. (test) 2.0G
@VCE (test) 10
Oper. Temp (°C) Max. 200
Pinout Equivalence Number 4-29
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.07 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 0.6 pF
Transition Frequency (ft): 4500 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 1294348
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