| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Case |
TO1 |
| Manufacturer |
Microsemi Corporation |
| Vbr CBO |
32 |
| Vbr CEO |
32 |
| Max. PD (W) |
200m |
| C(ob) (F) |
60p |
| Derate (Amb) (W/°C) |
3.1m |
| hfe |
50 |
| Ic Max. (A) |
250m |
| Icbo Max. @Vcb Max. (A) |
10u |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
900k |
| @VCE (test) (V) |
4.5 |
| Oper. Temp (°C) Max. |
100 |
| @Ic (A) |
1.0m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
32 V |
| Maximum Collector-Emitter Voltage |Vce| |
18 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
0.25 A |
| Max. Operating Junction Temperature (Tj) |
90 °C |
| Collector Capacitance (Cc) |
60 pF |
| Transition Frequency (ft): |
0.5 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
50 |
| SKU |
116866 |