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NS666
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NS666

SKU: NS666
NS666 Transistor Silicon PNP CASE: TO18 MAKE: National Semiconductor - NSC
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer National Semiconductor - NSC
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 150m
Derate (Amb) (W/°C) 833u
hfe 24
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 555259
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