NSB1706DMW5T1G
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NSB1706DMW5T1G

SKU: NSB1706DMW5T1G
NSB1706DMW5T1G Transistor Silicon Pre-Biased-NPN CASE: SOT353 MAKE: ON Semiconductor
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT353
Manufacturer ON Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.26 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code U6
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 513835
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