NSBA113EF3
View detailed images (1)

NSBA113EF3

SKU: NSBA113EF3
NSBA113EF3 Transistor Silicon PNP CASE: SOT1123-3 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT1123-3
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 3
SMD Transistor Code L
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1438456
Back