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NSBA114EDP6T5G
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NSBA114EDP6T5G

SKU: NSBA114EDP6T5G
NSBA114EDP6T5G Transistor Silicon PNP CASE: SOT963 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT963
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.27 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 35
SMD Transistor Code F
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1438458
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