NSBC114EPDP6
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NSBC114EPDP6

SKU: NSBC114EPDP6
NSBC114EPDP6 Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT963 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT963
Manufacturer Generic
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.27 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 35
SMD Transistor Code L
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1438543
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