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NSD123
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NSD123

SKU: NSD123
NSD123 Transistor Silicon NPN CASE: SOT128 MAKE: National Semiconductor - NSC
Product specifications
Type Transistor Silicon NPN
Case SOT128
Manufacturer National Semiconductor - NSC
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 1.7
Max. hFE 300
Min hFE 40
Ic Max. (A) 500m
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Derate Above 25°C 83m
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.75 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.25 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 555445
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