NST65010M
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NST65010M

SKU: NST65010M
NST65010M Transistor Silicon PNP CASE: SOT363 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT363
Manufacturer Generic
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.38 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 65 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 220
SMD Transistor Code 4G
SKU 1438760
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