NSV60100DMTWTBG
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NSV60100DMTWTBG

SKU: NSV60100DMTWTBG
NSV60100DMTWTBG Transistor Silicon PNP CASE: WDFN6 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case WDFN6
Manufacturer Generic
Polarity PNP
Maximum Collector Power Dissipation (Pc) 2.27 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 18 pF
Transition Frequency (ft): 155 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SMD Transistor Code AP
SKU 1438802
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