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NSVB143TPDXV6T1G
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NSVB143TPDXV6T1G

SKU: NSVB143TPDXV6T1G
NSVB143TPDXV6T1G Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT563 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT563
Manufacturer Generic
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 160
SMD Transistor Code 16
Built in Bias Resistor R1 4.7 kOhm
SKU 1438814
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