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NSVMUN5212DW1T1G
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NSVMUN5212DW1T1G

SKU: NSVMUN5212DW1T1G
NSVMUN5212DW1T1G Transistor Silicon Pre-Biased-NPN CASE: SOT363 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT363
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.26 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code 7B
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1438903
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