NSVMUN5331DW1T1G
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NSVMUN5331DW1T1G

SKU: NSVMUN5331DW1T1G
NSVMUN5331DW1T1G Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT363 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT363
Manufacturer Generic
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.26 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 8
SMD Transistor Code 31
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1438913
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