NTE106

SKU: NTE106

NTE106 Transistor Silicon PNP CASE: TO18 MAKE: NTE Electronics

Datasheet

NTE106 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO18
Manufacturer	NTE Electronics
Vbr CBO	35
Vbr CEO	15
Max. PD (W)	250m
hfe	20
Ic Max. (A)	75m
Polarity	PNP
Trans. Freq (Hz) Min.	500M
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.36 W
Maximum Collector-Base Voltage \|Vcb\|	15 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	4.5 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	2 pF
Transition Frequency (ft):	850 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	360242

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