Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
NTE Electronics |
Case |
TO39 |
Vbr CBO |
120 |
Vbr CEO |
80 |
Max. PD (W) |
1 |
Min hFE |
90 |
Ic Max. (A) |
1 |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
120M |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.8 W |
Maximum Collector-Base Voltage |Vcb| |
140 V |
Maximum Collector-Emitter Voltage |Vce| |
80 V |
Maximum Emitter-Base Voltage |Veb| |
7 V |
Maximum Collector Current |Ic max| |
1 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
12 pF |
Transition Frequency (ft): |
100 MHz |
Forward Current Transfer Ratio (hFE), MIN |
100 |
SKU |
265451 |