| Type | Transistor Germanium PNP | |
| Case | TO1 | |
| Manufacturer | NXP Semiconductors | |
| Vbr CBO | 26 | |
| Vbr CEO | 13 | |
| Max. PD (W) | 550m | |
| Derate (Amb) (W/°C) | 4.5m | |
| hfe | 50 | |
| Ic Max. (A) | 300m | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 16k | |
| @VCE (test) (V) | 6.0 | |
| Oper. Temp (°C) Max. | 75 | |
| @Ic (A) | 5.0m | |
| Pinout Equivalence Number | 3-17 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.55 W | |
| Maximum Collector-Base Voltage |Vcb| | 26 V | |
| Maximum Collector-Emitter Voltage |Vce| | 13 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 0.3 A | |
| Max. Operating Junction Temperature (Tj) | 80 °C | |
| Collector Capacitance (Cc) | 50 pF | |
| Transition Frequency (ft): | 0.2 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 50 | |
| SKU | 85141 | |