PBRN113EK
View detailed images (4)

PBRN113EK

SKU: PBRN113EK
PBRN113EK Transistor Silicon Pre-Biased-NPN CASE: SOT346 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT346
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Forward Current Transfer Ratio (hFE), MIN 40
SMD Transistor Code G1
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1439122
Back