PBRN113ES
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PBRN113ES

SKU: PBRN113ES
PBRN113ES Transistor Silicon Pre-Biased-NPN CASE: TO92 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case TO92
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.7 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Forward Current Transfer Ratio (hFE), MIN 40
SMD Transistor Code N113ES
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1439123
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