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PBRN113ET
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PBRN113ET

SKU: PBRN113ET
PBRN113ET Transistor Silicon Pre-Biased-NPN CASE: SOT23 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Forward Current Transfer Ratio (hFE), MIN 40
SMD Transistor Code 7G_p7G_t7G_W7G
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1439124
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