The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
PBSS4160DS
View detailed images (5)

PBSS4160DS

SKU: PBSS4160DS
PBSS4160DS Transistor Silicon NPN CASE: SOT6 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case SOT6
Manufacturer Philips
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.7 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 250
SMD Transistor Code B8
SKU 564371
Back