The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
PBSS8110D
View detailed images (5)

PBSS8110D

SKU: PBSS8110D
PBSS8110D SemiConductor - CASE: SOT6 MAKE: Philips
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case SOT6
Manufacturer Philips
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7.5 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SMD Transistor Code A8
SKU 563804
Back