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PBSS8110Y
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PBSS8110Y

SKU: PBSS8110Y
PBSS8110Y SemiConductor - CASE: SOT363 MAKE: Philips
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case SOT363
Manufacturer Philips
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.29 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7.5 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SMD Transistor Code 81*
SKU 563808
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