PDTA114EEF
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PDTA114EEF

SKU: PDTA114EEF
PDTA114EEF SI-PNP-DIGI - Case: SOT416 Make: Philips
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Product specifications
Equivalent PDTA114EE
Type Transistor Silicon NPN
Case SOT416
Manufacturer Philips
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code 3
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 564403
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