The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
PDTA115TM
View detailed images (1)

PDTA115TM

SKU: PDTA115TM
PDTA115TM Transistor Silicon PNP CASE: SOT883 MAKE: NXP Semiconductors
Product specifications
Type Transistor Silicon PNP
Case SOT883
Manufacturer NXP Semiconductors
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code E8_EB
Built in Bias Resistor R1 100000 kOhm
SKU 1439309
Back