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PDTA123EM
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PDTA123EM

SKU: PDTA123EM
PDTA123EM Transistor Silicon PNP CASE: SOT883 MAKE: NXP Semiconductors
Product specifications
Type Transistor Silicon PNP
Case SOT883
Manufacturer NXP Semiconductors
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code F7
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1439316
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