The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
PDTB113ET
View detailed images (5)

PDTB113ET

SKU: PDTB113ET
PDTB113ET Transistor Silicon PNP CASE: SOT23 MAKE: Philips
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Philips
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 11 pF
Forward Current Transfer Ratio (hFE), MIN 33
SMD Transistor Code *7U_-7U_p7U_t7U_W7U
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 563845
Back