The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
PDTB113ZT

PDTB113ZT

SKU: PDTB113ZT
PDTB113ZT SemiConductor - CASE: SOT23 MAKE: Philips
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Philips
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 11 pF
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code *7W_-7W_p7W_t7W_W7W
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 563848
Back