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PDTB123ET
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PDTB123ET

SKU: PDTB123ET
PDTB123ET Transistor Silicon PNP CASE: SOT23 MAKE: Philips
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Philips
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 11 pF
Forward Current Transfer Ratio (hFE), MIN 40
SMD Transistor Code *7S_-7S_p7S_t7S_W7S
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 563852
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