PDTC114EM
View detailed images (1)

PDTC114EM

SKU: PDTC114EM
PDTC114EM Transistor Silicon Pre-Biased-NPN CASE: SOT883 MAKE: NXP Semiconductors
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT883
Manufacturer NXP Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2.5 pF
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code DS
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1439380
Back