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PDTC114TE
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PDTC114TE

SKU: PDTC114TE
PDTC114TE Transistor Silicon NPN CASE: SOT416 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Philips
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2.5 pF
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code 24
Built in Bias Resistor R1 10 kOhm
SKU 563861
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