PDTC115EE
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PDTC115EE

SKU: PDTC115EE
PDTC115EE Transistor Silicon Pre-Biased-NPN CASE: SOT416 MAKE: NXP Semiconductors
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT416
Manufacturer NXP Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2.5 pF
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code 46
Built in Bias Resistor R1 100 kOhm
Built in Bias Resistor R2 100 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1439384
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