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PDTC115ET
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PDTC115ET

SKU: PDTC115ET
PDTC115ET Transistor Silicon Pre-Biased-NPN CASE: SOT23 MAKE: NXP Semiconductors
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer NXP Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2.5 pF
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code *44_p44_t44_W44
Built in Bias Resistor R1 100 kOhm
Built in Bias Resistor R2 100 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1439389
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