PDTC115TK
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PDTC115TK

SKU: PDTC115TK
PDTC115TK Transistor Silicon Pre-Biased-NPN CASE: SOT346 MAKE: NXP Semiconductors
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT346
Manufacturer NXP Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2.5 pF
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code 28
Built in Bias Resistor R1 100 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 4.5
SKU 1439392
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