PDTC123JM
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PDTC123JM

SKU: PDTC123JM
PDTC123JM Transistor Silicon Pre-Biased-NPN CASE: SOT883 MAKE: NXP Semiconductors
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT883
Manufacturer NXP Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2.5 pF
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code DW_G1
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 1439404
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