PDTC144VE
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PDTC144VE

SKU: PDTC144VE
PDTC144VE Transistor Silicon Pre-Biased-NPN CASE: SOT416 MAKE: NXP Semiconductors
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT416
Manufacturer NXP Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2 pF
Forward Current Transfer Ratio (hFE), MIN 40
SMD Transistor Code 18
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 4.7
SKU 1439448
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