The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
PDTD113ET
View detailed images (5)

PDTD113ET

SKU: PDTD113ET
PDTD113ET SemiConductor - CASE: SOT23 MAKE: Philips
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer Philips
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Forward Current Transfer Ratio (hFE), MIN 33
SMD Transistor Code *7R_-7R_p7R_t7R_W7R
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 563885
Back