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PDTD123YT
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PDTD123YT

SKU: PDTD123YT
PDTD123YT SemiConductor - CASE: SOT23 MAKE: Philips
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer Philips
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code *7X_-7X_p7X_t7X_W7X
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 563892
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