| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT23 |
| Manufacturer |
Philips |
| Vbr CBO |
160 |
| Vbr CEO |
140 |
| Max. PD (W) |
350m |
| C(ob) (F) |
6.0p |
| hfe |
20 |
| Ic Max. (A) |
600m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
100M |
| @VCE (test) (V) |
5.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
50m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.25 W |
| Maximum Collector-Base Voltage |Vcb| |
160 V |
| Maximum Collector-Emitter Voltage |Vce| |
140 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
0.3 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
6 pF |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
60 |
| SMD Transistor Code |
1F_p1F_t1F_W1F |
| SKU |
563076 |