| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT23 |
| Manufacturer |
Philips |
| Vbr CBO |
180 |
| Vbr CEO |
160 |
| Ic Max. (A) |
600m |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
200M- |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.25 W |
| Maximum Collector-Base Voltage |Vcb| |
180 V |
| Maximum Collector-Emitter Voltage |Vce| |
160 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
0.3 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
6 pF |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
80 |
| SMD Transistor Code |
G1_pG1_tG1_WG1 |
| SKU |
438916 |