| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT23 |
| Manufacturer |
Philips |
| Vbr CBO |
200 |
| Vbr CEO |
200 |
| Max. PD (W) |
310m |
| hfe |
25 |
| Ic Max. (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
50M |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
1.0m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.33 W |
| Maximum Collector-Base Voltage |Vcb| |
200 V |
| Maximum Collector-Emitter Voltage |Vce| |
200 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.2 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
4 pF |
| Transition Frequency (ft): |
50 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SMD Transistor Code |
1E_P1E_p1E_t1E_W1E |
| SKU |
562503 |