The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
PMD18D100
View detailed images (13)

PMD18D100

SKU: PMD18D100
PMD18D100 Transistor Silicon NPN CASE: TO3 MAKE: Lambda Semiconductors
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Lambda Semiconductors
Vbr CEO 100
Max. PD (W) 300
Max. hFE 20k
Min hFE 1.0k
Ic Max. (A) 50
@Ic (test) (A) 30
Icbo Max. @Vcb Max. (A) 15m
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 2.5
@VCE (test) 3.0
Oper. Temp (°C) Max. 200
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 300 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 50 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 1200 pF
Forward Current Transfer Ratio (hFE), MIN 300
SKU 655030
Back