Weight |
0.01 kg
|
Case |
TO92 |
Type |
Transistor Silicon PNP |
Manufacturer |
NTE Electronics |
Vbr CBO |
60 |
Vbr CEO |
60 |
Max. PD (W) |
625m |
C(ob) (F) |
8.0p |
Derate (Amb) (W/°C) |
4.8m |
hfe |
50 |
Ic Max. (A) |
600m |
Icbo Max. @Vcb Max. (A) |
10n |
Polarity |
PNP |
Trans. Freq (Hz) Min. |
200M |
@VCE (test) (V) |
10 |
Oper. Temp (°C) Max. |
140 |
@Ic (A) |
500m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.4 W |
Maximum Collector-Base Voltage |Vcb| |
60 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.8 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
8 pF |
Transition Frequency (ft): |
200 MHz |
Forward Current Transfer Ratio (hFE), MIN |
100 |
SKU |
80268 |