The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
PT530A
View detailed images (12)

PT530A

SKU: PT530A
PT530A Transistor Silicon NPN CASE: TO8 MAKE: TRW Vertriebs
Product specifications
Equivalent PT530
Type Transistor Silicon NPN
Case TO8
Manufacturer TRW Vertriebs
Dv/Dt Worst Case 3.0
Dv/Dt Worst Static 150-
Firing Char-Igt Max. 100m
Firing Char-Vgt Max. 2.5
I(h) Max. (A) 60m
@Temp. (test) (°C) 25
Id(off) Max. (A) 4.0m
Ir @ Diff. Temp (A) .50m
It(rms) Max. (A) 30
VRRM 300
Polarity NPN
Supp Curr. I(TSM) 250
1-Cycle Surge Current (A) 15
t(gt) Typ. (S) 3.0u
@Temp (test) (°C) 100
@Temp. (test) for Vf) 25
V(drm) Max. 500
Vf Max. 1.5
V(T) Max. 2.0
I(out) (If AVG) Max. 750m
@Volts (test) (V) 300
@If (test) .50
@Temp. (test) 100
@Temp. (test) 70#
Oper. Temp (°C) Min -40
Oper. Temp (°C) Max. 100
@It (A) 100
@It (A) 10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 587011
Back