PTB20081
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PTB20081

SKU: PTB20081
PTB20081 Transistor Silicon NPN CASE: Standard MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 233 W
Maximum Collector-Base Voltage |Vcb| 65 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 470 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code 20081
SKU 1439775
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