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PTB20097
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PTB20097

SKU: PTB20097
PTB20097 Transistor Silicon NPN CASE: M168 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case M168
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 175 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 915 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 278242
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