| Weight |
0.01 kg
|
| Type |
Transistor Silicon Pre-Biased-NPN |
| Case |
SOT363 |
| Manufacturer |
Philips |
| Polarity |
Pre-Biased-NPN |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
50 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
2.5 pF |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| SMD Transistor Code |
H*9 |
| Built in Bias Resistor R1 |
10 kOhm |
| Built in Bias Resistor R2 |
47 kOhm |
| Typical Resistor Ratio R1/R2 |
0.21 |
| SKU |
561841 |